MATERIAL SUBSTRATES PROCESSING MICROELECTRONICS

Brand Owner Address Description
QUASIC S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES CHEMIN DES FRANQUES BERNIN 38190 France material substrates processing for microelectronics, namely, splitting silicon carbide substrates between layers and cutting and polishing said split substrates;microelectronic components, namely, semiconductor material substrates for use in flat screens, integrated optical wave guides, sensors and micro-machining;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The present invention provides, in one aspect, a method of fabricating a gate oxide layer on a microelectronics substrate. This embodiment comprises forming a stress inducing pattern on a backside of a microelectronics wafer and growing a gate oxide layer on a front side of the microelectronics wafer in the presence of a tensile stress caused by the stress inducing pattern.