YOUTUBE CHANNEL

Brand Owner (click to sort) Address Description
DADS DO IT BETTER kling, jonathan 8450 leishear rd Laurel MD 20723 This is youtube channel, meant o support men and how ti videos and encourage growth and cool things to do with kids and will involve selling shirts and stickers and patches and monetizations possibly from youtube;
EARLY EDVENTURES Coates, Shelley 5230 Tyosa Street Fair Oaks CA 95628 YouTube channel; Video Content; Educational Videos;
LENA HAPPY Wise, Emily Jane 4410 Rummell Road Saint Cloud FL 34769 Youtube channel, also may be sell some goods later;
MANNY'S PLACE Fernandez, Emmanuel 1778 Southern Blvd 2E Bronx NY 10460 The YouTube Channel, Where you will learn to prepare the most delicious drinks and learn about the great world of Wines and Cigars;The name(s), portrait(s), and/or signature(s) shown in the mark identifies Emmanuel Fernandez, whose consent(s) to register is made of record.;
OOOOWEEE WOULD YOU LOOK AT ME Bateman, Jason 1008 Chowan Ave Lynchburg VA 24502 I have a Youtube channel and use the slogan for introduction and outro;
SINTRAART TRANSFORMING SELF Taylor, Tywanda 5 Shady Grove Court Savanah GA 31419 YouTube channel;The mark consists of Yellow and black Butterfly eating a yellow flower the slogan is SintraArt Transforming Self.;
SLOW GLOCK Villasenor,Jorge,Luis 1010 Medina St Trlr3 Houston TX 77012 I want to trademark my rapper name Slow Glock for my YouTube channel, And other social media platforms;
WE STILL DO! We Still Do! 432 Banyon Tree Circle, 200 Maitland FL 32751 YouTube Channel, Events (Gala), Counseling Program, Trips (Retreats), Product Sales (Shirts, hats, mugs, etc.);
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor ("IGFET") (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.