WORDING AUTOLOC WRITTEN

Brand Owner Address Description
AUTOLÖC THE HOFFMAN GROUP 201 SE Oak St Portland OR 97229 The wording AUTOLOC is written in black text with a German flair such that the second O has a diacritical mark (umlaut). There is a ball of fire with black shading and a black shadow encircling the first O and the interior of the O is shaped like a keyhole. The A and the L are capitalized. There is a white border around the text in the mark and a black shadow border outside the white border in the region below the text.;Metal hinges for motor car door, trunks and hoods; metal locks and latches for doors;AUTO LOCK;Color is not claimed as a feature of the mark.;Automotive aftermarket parts, namely, power door lock kits for automobiles consisting of electric motors, door locks, electrical relays, electrical wiring and electric switches all sold as a unit; power window kits consisting of window cranks, electric motors, electrical relays, electrical wiring and electric switches all sold as a unit, vehicle security systems comprised of car alarms, keyless entry transmitters and receivers, for automotive vehicles, automobile door handles; automotive tailgate locks and latches; motor vehicle power locks;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.