UNEXPOSED

Brand	Owner (click to sort)	Address	Description
ADEX	DJ Microlaminates, Inc.	490 Boston Post Road Sudbury MA 01776	Unexposed, exposed, or exposed and cured photoimagable, thin dry films in the form of sheets and rolls for use in the manufacture of micro-electro-mechanical devices, passive devices, displays, wafer level packaging, plating molds, microfluidic separation and analysis products, and portable, wireless, electronic, medical and point-of-use devices;
DENTIX	FOMA BOHEMIA spol. s r.o.	Jana Krusinky 1737/6, Prazské Predmestí, Hradec Králové CZ-500 02 Czech Republic	Unexposed, sensitized X-ray films;The wording DENTIX has no meaning in a foreign language.;
MEDICHROME	Agfa-Gevaert naamloze vennootschap	Septestraat 27 B-2640 Mortsel Belgium	UNEXPOSED, LIGHT-SENSITIVE FILM, PARTICULARLY RADIOGRAPHIC FILM;
NATURAL REFLECTION	EASTMAN KODAK COMPANY	343 State Street Rochester NY 14650	Unexposed, sensitized photographic film;
NEWS-LINE	POWERS CHEMCO, INC.	Glen Cove NY	UNEXPOSED, PRESENSITIZED PHOTOLITHOGRAPHIC PLATES;
NEWS-LINE	POWERS CHEMCO, INC.	Glen Cove NY	UNEXPOSED, PHOTOSENSITIZED PLATES AND FILMS;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH3)ySi(OH)4?y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH3)xSiO2?x. After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH3)ySi(OH)4?y of the unexposed portions relative to the (CH3)xSiO2?x of the exposed portions.