TYPE THREE

Brand Owner (click to sort) Address Description
I AM TYPE 3 I am Type 3 Inc. 6900 E. Green Lake Way N., Apt. 402 Seattle WA 98115 I AM TYPE THREE;Charitable fundraising to support diabetes research;
TYPE 3 Bartels, Nathan 493 Islay St San Luis Obispo CA 93401 TYPE THREE;Providing health, wellness, and diabetes management consultation;
TYPE 3 Big Choice Brewing 21 S. 1st Avenue Brighton CO 80601 TYPE THREE;Beer, ale, lager, stout, porter, shandy;
TYPE 3 Tuttle, Carol E. 15039 South Eagle Crest Drive Draper UT 840205720 TYPE THREE;Consulting Services in any one or more of the following fields for social purposes, personality and character assessment of various individuals, self help, improvement, spiritual healing, clothes shopping, clothing, and accessories; Personal fashion consulting;Consulting Services featuring information in any one or more of the following fields, beauty, appearance, hair-care and styling, and cosmetics; Beauty consultation services;
TYPE III Hu Liang Room 401, Building 1, No. 67, Low Stool Bridge, Wuma Street, Lucheng Dist. Wenzhou, Zhejiang 325099 China TYPE THREE;Cord; Floss silk; Packing string; Packing materials, not of rubber, plastics, paper or cardboard; Parachute cord; Ropes; Slings, not of metal, for handling loads; String; Textile bags for merchandise packaging; Twine for nets; Wrapping or binding bands, not of metal;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. There is provided a semiconductor device in which the thresholds of gate electrodes in transistors can be adjusted together for each of regions having their own functions different from one another. The semiconductor device is provided with: a P-type Si substrate 109; a P-type annular well 181 provided in the element formation surface side of the P-type Si substrate 109; and a N-type annular well 183 provided inside the P-type annular well 181. Moreover, an SRAM-P-type well 185 and an SRAM-N-type well 189 are provided inside the N-type annular well 183. A deep N-type well 133 is provided nearer to the bottom side of the P-type Si substrate 109 than the SRAM-P-type well 185 and the SRAM-N-type well 189. A plurality of P-type wells 103 are provided outside the P-type annular well 181, and a N-type 101 is provided in such a way that the well 101 encloses the outside faces of the P-type wells 103.