TOPOGRAPHY RECOGNITION IMAGING ATOMIC

Brand	Owner (click to sort)	Address	Description
PICOTREC	Molecular Imaging Corporation	4666 South Ash Avenue Tempe AZ 85282	topography and recognition imaging atomic force microscope (AFM) and microprocessor, controller, amplifier, laser, piezoelectric transducer and position sensitive detector used to chart variations in the topography of a sample and the presence of chemical or biological agents on the surface of a sample, all for use with atomic force microscopes;
TREC	Molecular Imaging Corporation	4666 South Ash Avenue Tempe AZ 85282	topography and recognition imaging atomic force microscope (AFM) and microprocessor, controller, amplifier, laser, piezoelectric transducer and position sensitive detector used to chart variations in the topography of a sample and the presence of chemical or biological agents on the surface of a sample all for use with atomic force microscopes;TREK;scanning probe microscope (SPM) probe derivatization kits, consisting primarily of chemical reagents and chemical crosslinking reagents used to attach a biological or chemical sensor to AFM cantilever tips for scientific or research use;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A method is provided for processing a semiconductor topography such that its upper surface is substantially planar, particularly including a region adjacent to an outer edge of a semiconductor topography. The method may include preferentially removing a portion of an upper layer of the topography in a region adjacent to an outer edge of the semiconductor topography. The region may extend greater than approximately 3 mm inward from the outer edge of the semiconductor topography. The method may also include polishing the semiconductor topography such that the upper surface of the semiconductor topography is substantially planar. Therefore, although a rate of polishing adjacent to an outer edge of the semiconductor topography may be slower than a rate of polishing adjacent to a center of the semiconductor topography, a thickness variation of the polished upper layer across the entirety of the semiconductor topography may be less than approximately 500 angstroms.