THREE C TRIPLE COMPOUND TECHNOLOGY

Brand	Owner	Address	Description
3C TRIPLE COMPOUND TECHNOLOGY	CHENG SHIN RUBBER IND. CO., LTD	215 MEEI-KONG ROAD Ta-Tsun, Chang-Hwa Taiwan	THREE C TRIPLE COMPOUND TECHNOLOGY;Tires;TRIPLE COMPOUND TECHNOLOGY;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

Disclosed herein are a NAND flash memory device and a method of forming a well of the NAND flash memory device. Triple wells of a NAND flash memory device are formed within a cell region in plural. A cell block including flash memory cells is formed on the triple wells. Accordingly, during an erase operation of a flash memory device, a stress time for non-selected blocks can be reduced and erase disturbance can be also prevented, through the plurality of the wells. Further, capacitance between the triple P wells and the triple N well is reduced since triple P wells are divided. Therefore, well bias charging and discharging time can be reduced and an overall erase time budget can be thus reduced.