SEMICONDUCTOR MATERIAL

Brand	Owner (click to sort)	Address	Description
IGEM	Mitsubishi Silicon America, Inc.	P.O. Box 7748 3990 Fairview Drive SE Salem OR 97302	Semiconductor material, namely doped and un doped silicon wafers and ingots;
SHALLOW SIMOX	Implanted Material Technology, Inc.	12516 N.E. 95th Street; Suite D110 Vancouver WA 98682	semiconductor material, namely, a silicon substrate having a layer of oxygen ions implanted therein;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, and a transistor on the same semiconductor. The first semiconductor protective layer protects the semiconductor substrate during formation of the second semiconductor layer, and the second semiconductor layer protects the second semiconductor material during subsequent processing of the first semiconductor. In one embodiment, the first semiconductor includes silicon and the second semiconductor material includes germanium.