SAPPHIRE

Brand Owner (click to sort) Address Description
AZZWNGY Wang, Guoyi No. 5 Jiaotong Road Yicheng City Xiangfan, Hubei 441400 China Sapphire; Agate as jewellery; Amber pendants being jewellery; Artificial gemstones; Choker necklaces; Costume jewelry; Hat jewelry; Jade; Jewellery, including imitation jewellery and plastic jewellery; Jewelry dishes; Key chains comprised of split rings with decorative fobs or trinkets; Key rings comprised of split rings with decorative fobs or trinkets; Leather jewelry boxes for jewelry and jewelry accessories; Shoe jewelry; Works of art of precious metal;The wording AZZWNGY has no meaning in a foreign language.;
POLYSAPPHIRE GAC International, Inc. 185 Oval Drive Central Islip NY 117221402 SAPPHIRE;ORTHODONTIC APPLIANCES, NAMELY BRACKETS;
SAFFIRE BOLDER SURGICAL 331 S. 104th Street Suite 200 Louisville CO 80027 SAPPHIRE;Surgical instruments, namely, tissue sealers and vessel sealers;
SAFIRE SAFIRE 208 FAIRVIEW ST. WATERTOWN WI 53099 A ROCK BAND;SAPPHIRE;
SAFIRE SPECIALIZED BICYCLE COMPONENTS, INC. 15130 Concord Circle Morgan Hill CA 95037 SAPPHIRE;Bicycles and bicycles frames;
SAFYRE Promedon S.A. Hipolito Irigoyen 388 - PB Cordoba X5000JHQ Argentina SAPPHIRE;Urinary slings for medical use, surgical implants comprising artificial materials, sutures, needles for medical use;
SAPHFIRE LASER PERIPHERALS Suite 110 13355 10th Avenue North Plymouth MN 55441 SAPPHIRE;MEDICAL LASER FIBERS; ENDOVENOUS FIBER OPTIC TOOLS IN THE NATURE OF LASER DELIVERY FIBERS FOR MEDICAL USE;
SAPHIR HUBBELL INCORPORATED 40 Waterview Drive Shelton CT 06484 SAPPHIRE;The English translation of the word SAPHIR in the mark is SAPPHIRE.;Lighting fixtures;
SAPHIRE Weymouth, Christopher 103 - 118th Ave. SE, #200 Bellevue WA 98005 SAPPHIRE;hotel and inn services;
SAPHYR VEOLIA WATER SOLUTIONS & TECHNOLOGIES SUPPORT IMMEUBLE L'AQUARENE 1 PLACE MONTGOLFIER SAINT-MAURICE 94410 France SAPPHIRE;Apparatus, devices and installations for treatment and reclamation of slurry, namely, slurry treatment units for stabilizing and sanitizing slurry; apparatus, devices and installations for water treatment, in particular for disinfecting, purifying and rendering water drinkable;
SDHCVFJJ Luo, Xia No. 2, Group 4, Bajiao Vil Shou'an Town, Pujiang County Sichuan Province 611500 China Sapphire; Agate as jewellery; Beads for use in the manufacture of jewelry; Costume jewelry; Jewellery, including imitation jewellery and plastic jewellery; Jewelry and imitation jewelry; Jewelry rolls; Necklace and earring combinations that can be worn separately or as one piece; Pearls; Precious gemstones; Presentation boxes for jewelry; Rhinestones for making jewelry; Sautoir necklaces; Synthetic precious stones; Watch bracelets;
STARPHIRE VITRO FLAT GLASS 400 Guys Run Road Cheswick PA 15024 sapphire; star sapphire;GLASS FOR USE IN MAKING FURNITURE, SHELVING AND CABINETS;
XAFFIRE Xaffire, Inc. Suite 200 100 Superior Plaza Way Superior CO 80027 SAPPHIRE;Monitoring computer networks of others, namely, monitoring and reporting various network metrics regarding the performance of computers connected to a global information system linked by a common protocol;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. However, prior to performing the laterally growing step, the sapphire substrate and/or the underlying gallium nitride layer is treated to prevent growth of gallium nitride from the trench floor from interfering with the lateral growth of the gallium nitride sidewalls of the at least one post into the at least one trench. Embodiments of gallium nitride semiconductor structures according to the present invention can include a sapphire substrate and an underlying gallium nitride layer on the sapphire substrate. The underlying gallium nitride layer includes therein at least one post and at least one trench. The at least one post each includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a sapphire floor. A lateral gallium nitride layer extends laterally from the gallium nitride sidewall of the at least one post into the at least one trench. In a preferred embodiment, the at least one trench extends into the sapphire substrate such that the at least one post each includes a gallium nitride top, a gallium nitride sidewall and a sapphire sidewall and the at least one trench includes a sapphire floor. The sapphire floor preferably is free of a vertical gallium nitride layer thereon and the sapphire sidewall height to sapphire floor width ratio preferably exceeds about 1/4. A mask may be included on the sapphire floor and an aluminum nitride buffer layer also may be included between the sapphire substrate and the underlying gallium nitride layer. A mask also may be included on the gallium nitride top.