RED GROVE

Brand Owner Address Description
REDGROVE Ambac Financial Group, Inc. One World Trade Center, 41st Floor New York NY 10007 RED GROVE;Holding company services performed for third parties, namely, investment management; Insurance administration; Insurance administration services, namely, assisting others with adjusting insurance claims; Insurance administration services, namely, assisting others with collecting insurance premiums; Insurance agencies; Insurance agency and brokerage; Insurance brokerage; Insurance brokerage in the field of insurance and reinsurance; Insurance brokerage services; Insurance carrier services; Insurance consultancy; Insurance consultation; Insurance consulting in the field of all type of insurance; Insurance information and consultancy; Insurance risk management; Insurance services, namely, underwriting all fields of insurance; Insurance services, namely, underwriting, issuance and administration of all fields of insurance; Insurance subrogation; Insurance subrogation and salvage; Insurance underwriting consultation; Insurance underwriting services for all types of insurance; Investment management; Investment management in the fields of insurance and reinsurance; Reinsurance underwriting; Consultancy services relating to insurance; Consulting and information concerning insurance; Development of insurance policies for others; Financial management in the field of insurance and reinsurance; Financial consultancy and insurance consultancy; Financial evaluation for insurance purposes; Financial services, namely, investment advice, investment management, investment consultation and investment of funds for others, including private and public equity and debt investment services; Providing information in insurance matters;Business consulting services; Business consulting services in the field of insurance and reinsurance; Holding company services performed for third parties, namely, business administration;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Consistent with an example embodiment a trench-gate semiconductor device, for example a MOSFET or IGBT, having a field plate provided below the trenched gate is manufactured using a process with improved reproducibility. The process includes the steps of etching a first grove into the semiconductor body for receiving the gate, and etching a second groove into the top major surface of the semiconductor body, the second groove extending from the first groove and being narrower than the first groove. The invention enables better control of the vertical extent of the gate below the top major surface of the semiconductor body.