NON METAL STRUCTURES MOUNTING

Brand Owner (click to sort) Address Description
SOLOBRIDGE SOLOPOWER SYSTEMS, INC. 6308 North Marine Drive Portland OR 97203 Non-metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of non-metal materials for mounting, or fixing in place, solar panels or solar modules;Metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of metal for mounting, or fixing in place, solar panels or solar modules;SOLO BRIDGE;
SOLOPOWER SoloPower, Inc. 5981 Optical Court San Jose CA 95138 Non-metal structures for mounting, or fixing in place, solar panels or solar modules;Metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of metal for mounting, or fixing in place, solar panels or solar modules;SOLO POWER;
SOLOSADDLE SOLOPOWER SYSTEMS, INC. 6308 North Marine Drive Portland OR 97203 Non-metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of non-metal materials for mounting, or fixing in place, solar panels or solar modules;Metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of metal for mounting, or fixing in place, solar panels or solar modules;SOLO SADDLE;
SOLOWEDGE SOLOPOWER SYSTEMS, INC. 6308 North Marine Drive Portland OR 97203 Non-metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of non-metal materials for mounting, or fixing in place, solar panels or solar modules;Metal structures for mounting, or fixing in place, solar panels or solar modules; structures comprised primarily of metal for mounting, or fixing in place, solar panels or solar modules;SOLO WEDGE;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The trenches may be filled with metal by surface activating using a catalytic metal, followed by electroless deposition of a seed layer followed by superconformal filling bottom up.