NON DESTRUCTIVE TESTING METAL STRUCTURES

Brand	Owner	Address	Description
UI	GENERAL DYNAMICS CORPORATION	3190 Fairview Park Drive Falls Church VA 22042	NON-DESTRUCTIVE TESTING OF METAL STRUCTURES EMPLOYING ULTRASONIC TESTING METHODS;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The trenches may be filled with metal by surface activating using a catalytic metal, followed by electroless deposition of a seed layer followed by superconformal filling bottom up.