NITROGEN

Brand Owner (click to sort) Address Description
CF CF Industries, Inc. Suite 400 4 Parkway North Deerfield IL 60015 Nitrogen, calcium phosphate and sodium phosphate, all for use in the fields of explosives, nitrogen oxide abatement, pharmaceuticals, adhesives, and ethanol fermentation;
DURABLE KangPing Li 29-3, 1 Building, No. 8, Jingyuan Ave., Longta Street, Yubei District, Chongqing City China nitrogen; hydrochloric acid; ammonia for industrial purposes; chemical preparations, namely, degreasing and cleaning solvents; bichloride of tin; glycerine for industrial purposes; adjuvants for use with pesticides; plastics, unprocessed; viscose (cellulose ester) chemicals; glue for industrial purposes;
GOT NITROGEN? Booth, Ronald 921 North Fairgrounds Road Midland TX 79706 Nitrogen;
N NIPAK NIPAK, INC. 301 S. HARWOOD ST. DALLAS, TEXAS NITROGEN, PHOSPHATE, AND POTASH BASED FERTILIZERS;
NITRAGIN EMD CROP BIOSCIENCE INC. 13100 WEST LISBON ROAD BROOKFIELD WI 53005 NITROGEN;SEED AND SOIL INOCULANT;
NITRAGIN NITRAGIN, INC. 13100 West Lisbon Avenue Brookfield WI 53005 NITROGEN;SEED AND SOIL INOCULANT;
NITRO HEDSTROM CORP. P.O. BOX 432 BEDFORD PA 15522 nitrogen;children's bicycles;
NITRO-GEN TDI International, Inc. 3351 E. Hemisphere Loop Tucson AZ 85706 NITROGEN;Nitrogen generators;
NITRO-GREEN PARKER FERTILIZER COMPANY, INC. 201 WEST FOURTH STREET SYLACAUGA AL 35150 NITROGEN;FERTILIZERS;
NITROGEN SINK Iams Company, The One Procter & Gamble Plaza Cincinnati OH 45202 NITROGEN;foodstuffs for animals;
NITROGEN TRAP Iams Company, The One Procter & Gamble Plaza Cincinnati OH 45202 NITROGEN;foodstuffs for animals;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate dielectric layer. The first nitrogen doping process is performed at a lower power, a lower pressure and a higher inert gas to nitrogen gas ratio than those at the second nitrogen doping process. The combination of the deeper nitrogen distribution of the first nitrogen doping process and the shallower nitrogen distribution of the second nitrogen doping process produces a flatter total nitrogen distribution profile so that leakage current from electron tunneling through the gate dielectric layer can be reduced.