NEWSLETTERS GALLIUM ARSENIDE

Brand Owner Address Description
GAAS LIGHTS Strategies Unlimited Suite 205 201 San Antonio Cir. Mountain View CA 94040 newsletters for the gallium arsenide industry;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.