INTER STOP

Brand Owner Address Description
INTER-STOP STABILUS GMBH Wallersheimer Weg 100 56070 Koblenz Germany INTER STOP;Motor vehicle pneumatic cylinder units with or without latches, locks, and detents for adjusting and/or locking motor vehicle doors, motor vehicle hoods, motor vehicle hatchbacks, motor vehicle trunk lids, motor vehicle windows, motor vehicle gullwing doors, motor vehicle headlights, motor vehicle folding or concealed headlights, motor vehicle covers, motor vehicle roofs, motor vehicle tops, motor vehicle tailgates, and motor vehicle wing doors; motor vehicle hydropneumatic cylinder units with or without latches, locks and detents for adjusting and/or locking motor vehicle doors, motor vehicle hoods, motor vehicle hatchbacks, motor vehicle trunk lids, motor vehicle windows, motor vehicle gullwing doors, motor vehicle headlights, motor vehicle folding or concealed headlights, motor vehicle covers, motor vehicle roofs, motor vehicle tops motor vehicle tailgates, and motor vehicle wing doors; pneumatic and/or hydropneumatic cylinder units for adjusting and/or locking motor vehicle doors, motor vehicle hoods, motor vehicle hatchbacks, motor vehicle trunk lids, motor vehicle windows, motor vehicle gullwing doors, motor vehicle headlights, motor vehicle folding or concealed headlights, motor vehicle covers, motor vehicle roofs, motor vehicle tops motor vehicle tailgates, and motor vehicle wing doors;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method for fabricating a semiconductor device is capable of preventing a hard mask layer of a conductive structure from being damaged during a self-aligned contact etching process. The method includes the steps of: forming a plurality of conductive structures including a conductive layer and a hard mask layer on a substrate; sequentially forming a first nitride layer, an oxide layer, a second nitride layer, and an etch stop layer on the plurality of conductive structures; forming an inter-layer insulation layer on the etch stop layer; and performing a self-aligned contact (SAC) etching process selectively etching the inter-layer insulation layer, the etch stop layer, the second nitride layer and the oxide layer until the SAC etching process is stopped at the first nitride layer to thereby form a contact hole exposing the first nitride layer.