INTEGRATED CIRCUITS CONTAINING BIPOLAR TRANSISTORS

Brand	Owner	Address	Description
BI-FET	TEXAS INSTRUMENTS INCORPORATED	12500 TI Boulevard, MS 3999 Dallas TX 752434136	Integrated Circuits Containing Bipolar Transistors and Junction Field Effect Transistors (JFETS) in a Common Silicon Semiconductor Substrate;In the statement, Column 1, Line 1, CALIFORNIA should be deleted, and DELAWARE should be inserted.;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

The invention relates to a method for producing high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip. In order to produce these high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip, all technological method steps for producing the vertical structure of the collector, base and emitter in the active region of the npn bipolar transistors as well as for laterally structuring the collector regions, base regions and emitter regions are performed before the troughs and the gate insulating layer for the MOS transistors are produced.