INSULATING STONES INSULATING COMPOUNDS

Brand Owner Address Description
ANKER REFRACTORY INTELLECTUAL PROPERTY GMBH &CO. KG Wienerbergstr. 11 A-1100 Wien Austria Insulating stones and insulating compounds having high heat resistance and particularly, high resistance to high temperatures, made of magnesite, dolomite, chromite, fire clay and other refractory materials and mixes thereof; fire burrs and refractory shapes made of magnesite, dolomite, chromite, fire clay and other refractory materials and mixes thereof with or without metallic layers or metallic inserts, as well as incoherent masses of such materials, all intended for the construction or repair of refractory linings of metallurgical furnaces of all kinds and for the construction of electric storage furnaces; magnesia cement, cement and components for construction made thereof in the nature of cement bonded posts, cement bonded particle boards, cement bonded panels, cement bonded composite panels, cement bonded pipes, cement bonded slabs, cement bonded flooring materials, cement bonded masses for the construction of furnaces, cement bonded masses for the construction of linings of aggregates or furnaces for melting metals, cement bonded masses for the construction of linings of aggregates or furnaces for melting metals, cement bonded masses for the construction of linings of aggregates for keeping, treating or casting metal melts; lime building materials, wooden building parts in the nature of fire resisting wood, wood boards, wood beams, wood joists, wood poles, wood posts, wood planks, structural and architectural members formed of pressed wood fibers, construction materials in the nature of non-metal composite panels composed primarily of wood;Color is not claimed as a feature of the mark.;The English translation of Anker in the mark is Anchor.;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.