E CHANNEL

Brand	Owner (click to sort)	Address	Description
E-CHANNEL	UNIVERSITY OF UTAH RESEARCH FOUNDATION	Suite 310 615 Arapeen Drive Salt Lake City UT 84108	E CHANNEL;Providing an Internet website portal in the fields of technology and software development;
ECHANNEL	ECHANNEL, INC.	2025 First Avenue, Suite 1000 Seattle WA 98121	E CHANNEL;providing on-line information, advertising, and transactional services to businesses that wish to advertise and sell goods and services on-line in the field of leisure activities;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor ("IGFET") (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.