DIAMOND LIGHT

Brand Owner (click to sort) Address Description
DIAMOND-LITE CAREFUSION 2200, INC. 3750 Torrey View Court San Diego CA 92130 DIAMOND LIGHT;titanium surgical instruments; namely, forceps, needle holders and scissors;
DIAMOND-LITE CAREFUSION 2200, INC. 3750 Torrey View Court San Diego CA 92130 DIAMOND-LIGHT;Fiberoptic light system comprising of an adjustable headlight band with an attached fiber optic cable for providing light from a light source to be used in medical and surgical procedures;
DIAMOND-LITE SNOWDEN PENCER INC. 5175 SOUTH ROYAL ATLANTIC DRIVE TUCKER GA 30084 DIAMOND LIGHT;titanium surgical instruments; namely, forceps, needle holders and scissors;
DIAMONDLIGHT Desert Development Foundation 4500 North 32nd Street, Suite 100 Phoenix AZ 85018 DIAMOND LIGHT;Sunlight reflection apparatus;
DIAMONDLIGHT Bailey, Michael A. 1023 Inspiration Lane Escondido CA 92025 DIAMOND LIGHT;LED (light emitting diode) lighting fixtures; LED (light emitting diodes) lighting fixtures for use in display, commercial, industrial, residential, and architectural accent lighting applications; LED and HID light fixtures; LED light assemblies for street lights, signs, commercial lighting, automobiles, buildings, and other architectural uses; LED light bulbs; LED lighting fixtures for indoor and outdoor lighting applications; Optical lens covers that improves light output and uniformity, and protects the LED sold as a feature of an LED lighting system;
DIAMONDLITE Direct Source International Inc. 6824 Ashfield Drive Cincinnati OH 452424108 DIAMOND LIGHT;disposable butane lighters;
DIAMONDLITE Direct Source International Inc. 6824 Ashfield Drive Cincinnati OH 452424108 DIAMOND LIGHT;Christmas light sets, namely strands of light sockets and bulbs therefor sold as a set;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.