CONTROLLED ETCHANT FOR SILICON DIOXIDE

Brand	Owner	Address	Description
TIMETCH	TRANSENE COMPANY, INCORPORATED	ROUTE ONE, TURNPIKE ROWLEY MA 01969	CONTROLLED ETCHANT FOR SILICON DIOXIDE FILMS FOR USE GENERALLY IN MICROCIRCUITS;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six, etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture. The invention also includes semiconductor devices that include structures that have been patterned with an etchant of the present invention or in accordance with the method of the present invention. Specifically, the present invention includes semiconductor devices including doped silicon oxide structures with substantially vertical sidewalls and adjacent undoped silicon oxide or silicon nitride structures exposed adjacent the sidewall.