CONTROL SYSTEMS COMPOSED

Brand Owner Address Description
COE USNR 1981 Schurman Way Woodland WA 98674 [ CONTROL SYSTEMS COMPOSED OF COMPUTER HARDWARE, OPERATING SOFTWARE, INDUSTRIAL PROCESS CONTROL SOFTWARE AND OPTICAL AND THERMOGRAPH INSPECTION APPARATUS, ALL FOR USE IN CONTROLLING THE OPERATION OF LUMBER HANDLING AND SAWING MACHINERY ];VENEER LATHES, VENEER CLIPPERS, VENEER GRINDERS, VENEER FEEDERS AND UNLOADERS, WALLBOARD TRANSFER AND HANDLING APPARATUS, FIBERBOARD TRANSFER AND HANDLING APPARATUS, PLASTERBOARD TRANSFER AND HANDLING APPARATUS, WALLBOARD FEEDERS AND UNLOADERS, FIBERBOARD FEEDERS AND UNLOADERS, AND PLASTERBOARD FEEDERS AND UNLOADERS; [ MATERIALS HANDLING EQUIPMENT FOR THE FOREST PRODUCTS INDUSTRY, NAMELY, CHAIN, BELT AND ROLLER CONVEYORS, LUMBER STACKERS, LUMBER UNSTACKERS, STICKER PLACERS, LUMBER SORTERS, LUMBER PULL-OFF ROLLS, LUMBER FEEDERS, AND POWER OPERATED SAWS; ] EQUIPMENT FOR PROCESSING AND HANDLING GYPSUM AND FIBERBOARD, NAMELY, CONVEYORS, KNIVES, SAWS, FORMERS, PRESSES, PACKAGING MACHINES, SIZING MACHINES, WET TRANSFER TABLES, DRY TRANSFER TABLES, AND PARTS THEREFOR; PRESS SYSTEMS FOR COMPOSITE WOOD PRODUCTS, ENGINEERED WOOD PRODUCTS, RUBBER PRODUCTS, HIGH PRESSURE LAMINATES AND COPPER CLAD SHEET MATERIALS, NAMELY, FORMING MACHINES, CONVEYORS, TRIMMERS, CROSS CUTTING MACHINES, LOADERS, PRESSING MACHINES, UNLOADERS, AND PRESS UPGRADE KITS; RADIO FREQUENCY GLUING SYSTEMS FOR WOOD PRODUCTS COMPOSED PRIMARILY OF FEEDERS, GLUE APPLICATORS, RADIO FREQUENCY GENERATORS FOR HARDENING GLUE, CUT-OFF SAWS, AND DISCHARGE CONVEYORS;VENEER DRYERS, WALLBOARD DRYERS, FIBERBOARD DRYERS, AND PLASTERBOARD DRYERS, HEAT TREATING EQUIPMENT FOR LUMBER, VENEER, PARTICLE BOARD, GYPSUM BOARD, HARD BOARD, SOFT BOARD AND FIBER BOARD, NAMELY, KILNS AND VENEER DRYERS; ENERGY RECOVERY EQUIPMENT FOR DRYERS, AND PARTS THEREFOR;
 

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Technical Examples
  1. An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.