COMPLIMENTARY METAL OXIDE SEMICONDUCTOR

Brand Owner Address Description
ZETA NOISE BLOCKER INTELLITECH, INC. Suite 5 11801 28th Street N. St. Petersburg FL 33716 COMPLIMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) MICROPROCESSOR CHIP CONTAINING A SELF-ADAPTIVE FILTER THAT IDENTIFIES AND SUPPRESSES THE VOLUME OF BACKGROUND NOISE COMPARED TO THE VOLUME OF SPEECH;NOISE BLOCKER;
 

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Technical Examples
  1. A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.